| PART |
Description |
Maker |
| HN3G01J HN3G01 E002017 |
N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR
From old datasheet system
|
http://
Toshiba Semiconductor
|
| 2SK170 K170 |
FET/ Silicon N Channel Junction Type(for Low Noise Audio Amplifier)
FET, Silicon N Channel Junction Type(for Low Noise Audio Amplifier)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK58 |
From old datasheet system
Silicon N-Channel Junction Type Dual FET (DC-to-VHF Use, Low Noise)
|
Sony Corporation
|
| EC3A01H |
N-Channel Silicon Junction FET - Electret Condenser Microphone Applications
Junction FETs
|
Sanyo Electric Co.,Ltd.
Sanyo Semicon Device
|
| 2SK492 |
FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE
150mW SMD J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 1 to 12 mA Idss.
|
Isahaya Electronics Cor...
Isahaya Electronics Corporation
|
| 2SK2145 |
Junction FET (Surface mount type) 2 in 1
|
Toshiba, Corp.
|
| RJN1164 |
N-Channel Junction FET
|
RFsemi Technologies
|
| MF862 |
N-channel junction FET
|
Hope Microelectronics co., Ltd
|
| 2SK198 |
Silicon N-Channel Junction FET
|
Panasonic Semiconductor
|
| 2SK322 |
Silicon N-Channel Junction FET
|
Hitachi Semiconductor
|
| 2SK3372G |
Silicon N-Channel Junction FET
|
Panasonic
|
| TF208TH |
N-channel Silicon Junction FET
|
Sanyo Semicon Device
|
